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Cross-sectional Scanning Tunneling Microscopy for Atomically Resolved Analysis of Novel Semiconductor Nanostructures

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When Sep 27, 2013
from 01:30 PM to 02:30 PM
Where 57-124 E4
Contact Name
Contact Phone 310-983-3116
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The resulting spatial structure of semiconductor interfaces and nanostructures depend crucially on the growth and capping processes. Hence, investigations on the resulting embedded structures on the atomic scale are essential and important in order to understand growth processes and therewith optimize the optoelectronic properties. Cross-sectional scanning tunneling microscopy (XSTM) is a powerful tool for such a structural investigation. The advantages, but also the challenges of XSTM will be explained within this presentation using the different examples of novel semiconductor nanostructures, like e.g., InGaAs/GaP quantum dots/rings, GaAs/GaSb nanoscale agglomerations, a GaSb/GaAs interfacial misfit structure, and InGaAs/GaAs core-shell nanowires.

Department Hosting: Electrical Engineering

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